auf Bestellung 39 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 4.89 EUR |
| 12+ | 4.39 EUR |
| 100+ | 3.54 EUR |
| 800+ | 2.39 EUR |
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Technische Details FDB86102LZ onsemi / Fairchild
Description: MOSFET N-CH 100V 8.3A/30A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 8.3A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: D²PAK (TO-263), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 50 V.
Weitere Produktangebote FDB86102LZ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| FDB86102LZ | Hersteller : ON Semiconductor |
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auf Bestellung 705 Stücke: Lieferzeit 21-28 Tag (e) |
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FDB86102LZ | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 50A; 3.1W; D2PAK Technology: UniFET™ Mounting: SMD Case: D2PAK Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 3.1W On-state resistance: 42mΩ Polarisation: unipolar Gate charge: 21nC Gate-source voltage: ±20V Pulsed drain current: 50A Drain-source voltage: 100V Drain current: 30A Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDB86102LZ | Hersteller : onsemi |
Description: MOSFET N-CH 100V 8.3A/30A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 8.3A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 50 V |
Produkt ist nicht verfügbar |
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FDB86102LZ | Hersteller : onsemi |
Description: MOSFET N-CH 100V 8.3A/30A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 8.3A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 50 V |
Produkt ist nicht verfügbar |
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FDB86102LZ | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 50A; 3.1W; D2PAK Technology: UniFET™ Mounting: SMD Case: D2PAK Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 3.1W On-state resistance: 42mΩ Polarisation: unipolar Gate charge: 21nC Gate-source voltage: ±20V Pulsed drain current: 50A Drain-source voltage: 100V Drain current: 30A Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |