FDB86102LZ

FDB86102LZ Fairchild Semiconductor


ONSM-S-A0003584116-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 8
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.3A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 50 V
auf Bestellung 6918 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
345+1.47 EUR
Mindestbestellmenge: 345
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDB86102LZ Fairchild Semiconductor

Description: MOSFET N-CH 100V 8.3A/30A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 8.3A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 50 V.

Weitere Produktangebote FDB86102LZ nach Preis ab 1.31 EUR bis 4.26 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
FDB86102LZ FDB86102LZ Hersteller : onsemi / Fairchild ONSM-S-A0003584116-1.pdf?t.download=true&u=5oefqw MOSFETs 100V NCHAN PwrTrench
auf Bestellung 2233 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.45 EUR
10+2.36 EUR
100+1.69 EUR
800+1.35 EUR
2400+1.31 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDB86102LZ FDB86102LZ Hersteller : onsemi ONSM-S-A0003584116-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 8.3A/30A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.3A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 50 V
auf Bestellung 395 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.26 EUR
10+2.75 EUR
100+1.88 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
FDB86102LZ Hersteller : ON Semiconductor ONSM-S-A0003584116-1.pdf?t.download=true&u=5oefqw
auf Bestellung 705 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FDB86102LZ Hersteller : ONSEMI ONSM-S-A0003584116-1.pdf?t.download=true&u=5oefqw FDB86102LZ SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDB86102LZ FDB86102LZ Hersteller : onsemi ONSM-S-A0003584116-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 8.3A/30A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.3A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH