FDB86102LZ Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 8
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.3A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 50 V
| Anzahl | Preis |
|---|---|
| 345+ | 1.47 EUR |
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Technische Details FDB86102LZ Fairchild Semiconductor
Description: MOSFET N-CH 100V 8.3A/30A TO263, Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 3.1W (Ta), Rds On (Max) @ Id, Vgs: 24mOhm @ 8.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote FDB86102LZ nach Preis ab 1.19 EUR bis 4.26 EUR
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FDB86102LZ | onsemi / Fairchild |
MOSFETs 100V NCHAN PwrTrench |
auf Bestellung 3171 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB86102LZ | onsemi |
Description: MOSFET N-CH 100V 8.3A/30A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 8.3A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 50 V |
auf Bestellung 395 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDB86102LZ | ON Semiconductor |
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auf Bestellung 705 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDB86102LZ |
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Hersteller: onsemi / Fairchild
MOSFETs 100V NCHAN PwrTrench
MOSFETs 100V NCHAN PwrTrench
auf Bestellung 3171 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.06 EUR |
| 10+ | 1.81 EUR |
| 100+ | 1.61 EUR |
| 500+ | 1.3 EUR |
| 800+ | 1.19 EUR |
| FDB86102LZ |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 8.3A/30A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.3A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 50 V
Description: MOSFET N-CH 100V 8.3A/30A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.3A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 50 V
auf Bestellung 395 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.26 EUR |
| 10+ | 2.75 EUR |
| 100+ | 1.88 EUR |
| FDB86102LZ |
|
Hersteller: ON Semiconductor
auf Bestellung 705 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH