FDB86102LZ Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 8
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.3A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 50 V
| Anzahl | Privatkunde |
|---|---|
| 212+ | 2.75 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
212 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details FDB86102LZ Fairchild Semiconductor
Description: MOSFET N-CH 100V 8.3A/30A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 8.3A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 50 V.
Weitere Produktangebote FDB86102LZ nach Preis ab 1.76 EUR bis 5.63 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDB86102LZ | onsemi |
Description: MOSFET N-CH 100V 8.3A/30A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 8.3A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 50 V |
auf Bestellung 277 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
FDB86102LZ | onsemi |
MOSFETs 100V NCHAN PwrTrench |
auf Bestellung 1837 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDB86102LZ |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 8.3A/30A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.3A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 50 V
Description: MOSFET N-CH 100V 8.3A/30A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.3A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 50 V
auf Bestellung 277 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.49 EUR |
| 10+ | 3.55 EUR |
| 50+ | 2.71 EUR |
| 100+ | 2.44 EUR |
| FDB86102LZ |
|
Hersteller: onsemi
MOSFETs 100V NCHAN PwrTrench
MOSFETs 100V NCHAN PwrTrench
auf Bestellung 1837 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.63 EUR |
| 10+ | 3.64 EUR |
| 100+ | 2.49 EUR |
| 500+ | 2.03 EUR |
| 800+ | 1.87 EUR |
| 2400+ | 1.82 EUR |
| 4800+ | 1.76 EUR |