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FDBL0210N80

FDBL0210N80 onsemi

fdbl0210n80-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 80V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2000+6.85 EUR
Mindestbestellmenge: 2000
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Technische Details FDBL0210N80 onsemi

Description: MOSFET N-CH 80V 240A 8HPSOF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V, Power Dissipation (Max): 357W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-HPSOF, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V.

Weitere Produktangebote FDBL0210N80 nach Preis ab 7.07 EUR bis 14.09 EUR

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FDBL0210N80 FDBL0210N80 Hersteller : onsemi / Fairchild FDBL0210N80_D-2312219.pdf MOSFET Code D IMR
auf Bestellung 3949 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+14.01 EUR
10+ 11.75 EUR
25+ 11.52 EUR
100+ 9.44 EUR
250+ 9.33 EUR
500+ 8.27 EUR
1000+ 7.07 EUR
Mindestbestellmenge: 4
FDBL0210N80 FDBL0210N80 Hersteller : onsemi fdbl0210n80-d.pdf Description: MOSFET N-CH 80V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
auf Bestellung 3660 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+14.09 EUR
10+ 11.82 EUR
100+ 9.56 EUR
500+ 8.5 EUR
1000+ 7.28 EUR
Mindestbestellmenge: 2
FDBL0210N80 FDBL0210N80 Hersteller : ON Semiconductor 3345557704732506fdbl0210n80.pdf Trans MOSFET N-CH 80V 240A 9-Pin(8+Tab) PSOF T/R
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