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FDBL0210N80

FDBL0210N80 onsemi

fdbl0210n80-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 80V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+4.1 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDBL0210N80 onsemi

Description: MOSFET N-CH 80V 240A 8HPSOF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V, Power Dissipation (Max): 357W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-HPSOF, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V.

Weitere Produktangebote FDBL0210N80 nach Preis ab 4.73 EUR bis 10.95 EUR

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FDBL0210N80 FDBL0210N80 onsemi fdbl0210n80-d.pdf Description: MOSFET N-CH 80V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
auf Bestellung 3349 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.81 EUR
10+7.29 EUR
100+5.29 EUR
500+5.02 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0210N80 FDBL0210N80 onsemi fdbl0210n80-d.pdf MOSFETs Code D IMR
auf Bestellung 3780 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.95 EUR
10+7.39 EUR
100+5.35 EUR
500+5.09 EUR
1000+4.73 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0210N80 fdbl0210n80-d.pdf
FDBL0210N80
Hersteller: onsemi
Description: MOSFET N-CH 80V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
auf Bestellung 3349 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.81 EUR
10+7.29 EUR
100+5.29 EUR
500+5.02 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0210N80 fdbl0210n80-d.pdf
FDBL0210N80
Hersteller: onsemi
MOSFETs Code D IMR
auf Bestellung 3780 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.95 EUR
10+7.39 EUR
100+5.35 EUR
500+5.09 EUR
1000+4.73 EUR
Im Einkaufswagen  Stück im Wert von  UAH