FDBL0210N80 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 80V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 4.24 EUR |
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Technische Details FDBL0210N80 onsemi
Description: MOSFET N-CH 80V 240A 8HPSOF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V, Power Dissipation (Max): 357W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-HPSOF, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V.
Weitere Produktangebote FDBL0210N80 nach Preis ab 4.75 EUR bis 7.52 EUR
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FDBL0210N80 | Hersteller : onsemi |
Description: MOSFET N-CH 80V 240A 8HPSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Power Dissipation (Max): 357W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V |
auf Bestellung 3442 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL0210N80 | Hersteller : onsemi / Fairchild |
MOSFETs Code D IMR |
auf Bestellung 3849 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL0210N80 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 240A 9-Pin(8+Tab) PSOF T/R |
Produkt ist nicht verfügbar |
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| FDBL0210N80 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 357W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 240A Power dissipation: 357W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 130nC Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| FDBL0210N80 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 357W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 240A Power dissipation: 357W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 130nC |
Produkt ist nicht verfügbar |