FDC6432SH Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: MOSFET N/P-CH 30V/12V 2.4A SSOT6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V, 12V
Current - Continuous Drain (Id) @ 25°C: 2.4A, 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SuperSOT™-6
Description: MOSFET N/P-CH 30V/12V 2.4A SSOT6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V, 12V
Current - Continuous Drain (Id) @ 25°C: 2.4A, 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SuperSOT™-6
auf Bestellung 45128 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
683+ | 0.73 EUR |
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Technische Details FDC6432SH Fairchild Semiconductor
Description: MOSFET N/P-CH 30V/12V 2.4A SSOT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, Drain to Source Voltage (Vdss): 30V, 12V, Current - Continuous Drain (Id) @ 25°C: 2.4A, 2.5A, Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 15V, Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: SuperSOT™-6.
Weitere Produktangebote FDC6432SH
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
FDC6432SH | Hersteller : ONSEMI |
Description: ONSEMI - FDC6432SH - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 45128 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6432SH |
auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDC6432SH | Hersteller : ON Semiconductor | Trans MOSFET P-CH 30V/12V 2.4A/2.5A 6-Pin SuperSOT T/R |
Produkt ist nicht verfügbar |
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FDC6432SH | Hersteller : onsemi |
Description: MOSFET N/P-CH 30V/12V 2.4A SSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 30V, 12V Current - Continuous Drain (Id) @ 25°C: 2.4A, 2.5A Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 15V Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: SuperSOT™-6 |
Produkt ist nicht verfügbar |