auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.2 EUR |
| 6000+ | 0.19 EUR |
| 9000+ | 0.18 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDC655BN ON Semiconductor
Description: MOSFET N-CH 30V 6.3A SUPERSOT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 6.3A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SuperSOT™-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 15 V.
Weitere Produktangebote FDC655BN nach Preis ab 0.18 EUR bis 1.11 EUR
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FDC655BN | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 30V 6.3A 6-Pin TSOT-23 T/R |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC655BN | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 6.3A 6-Pin TSOT-23 T/R |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC655BN | Hersteller : onsemi |
Description: MOSFET N-CH 30V 6.3A SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 6.3A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 15 V |
auf Bestellung 45000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDC655BN | Hersteller : onsemi |
Description: MOSFET N-CH 30V 6.3A SUPERSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 6.3A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 15 V |
auf Bestellung 46812 Stücke: Lieferzeit 21-28 Tag (e) |
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FDC655BN | Hersteller : onsemi / Fairchild |
MOSFET SINGLE NCH LOG LVEL PWR TRENCH MOSFET |
auf Bestellung 62727 Stücke: Lieferzeit 14-28 Tag (e) |
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FDC655BN | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 6.3A 6-Pin TSOT-23 T/R |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC655BN | Hersteller : ONSEMI |
Description: ONSEMI - FDC655BN - Leistungs-MOSFET, n-Kanal, 30 V, 6.3 A, 0.021 ohm, SuperSOT, Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: YES Verlustleistung: 800mW euEccn: NLR hazardous: false Drain-Source-Spannung Vds: 30V Drain-Source-Durchgangswiderstand: 0.021ohm rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 76718 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC655BN | Hersteller : ONSEMI |
Description: ONSEMI - FDC655BN - Leistungs-MOSFET, n-Kanal, 30 V, 6.3 A, 0.021 ohm, SuperSOT, Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: YES Verlustleistung: 800mW euEccn: NLR hazardous: false Drain-Source-Spannung Vds: 30V Drain-Source-Durchgangswiderstand: 0.021ohm rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 76718 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC655BN Produktcode: 169802 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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FDC655BN | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 6.3A 6-Pin TSOT-23 T/R |
Produkt ist nicht verfügbar |
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FDC655BN | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 6.3A 6-Pin TSOT-23 T/R |
Produkt ist nicht verfügbar |
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FDC655BN | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.3A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDC655BN | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.3A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |