FDD068AN03L
Technische Details FDD068AN03L
Description: MOSFET N-CH 30V 17A/35A TO252AA, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Supplier Device Package: TO-252AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Capacitance (Ciss) (Max) @ Vds: 2.525pF @ 15V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V, Power Dissipation (Max): 80W (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 35A (Tc), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Obsolete, Packaging: Bulk, Manufacturer: Rochester Electronics, LLC.
Preis FDD068AN03L ab 0 EUR bis 0 EUR
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FDD068AN03L Hersteller: FAIRCHILD TO-252 
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21000 Stücke |
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FDD068AN03L Hersteller: fairchild to-252/d-pak
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30000 Stücke |
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FDD068AN03L Hersteller: FAIRCHILD D-PAK/ TO-252
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9500 Stücke |
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 Hersteller: Rochester Electronics, LLC Description: N-CHANNEL POWER MOSFET Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 35A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 80W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2.525pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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auf Bestellung 8203 Stücke  Lieferzeit 21-28 Tag (e) |
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 Hersteller: Fairchild Semiconductor Description: MOSFET N-CH 30V 35A D-PAK Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 80W Input Capacitance (Ciss) (Max) @ Vds: 2525pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 35A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: Fairchild Semiconductor Description: MOSFET N-CH 30V 17A/35A TO252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 2.525pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V Power Dissipation (Max): 80W (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 35A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Bulk Manufacturer: Rochester Electronics, LLC
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auf Bestellung 8203 Stücke Lieferzeit 21-28 Tag (e) |
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