FDD068AN03L

FDD068AN03L

Hersteller: FAIRCHILD
07+ TO-252
FD(D,U)068AN03L.pdf FAIRS37161-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7 FAIRS37161-1.pdf?t.download=true&u=5oefqw
verfügbar/auf Bestellung
21000 Stücke

Technische Details FDD068AN03L

Description: MOSFET N-CH 30V 17A/35A TO252AA, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Supplier Device Package: TO-252AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Capacitance (Ciss) (Max) @ Vds: 2.525pF @ 15V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V, Power Dissipation (Max): 80W (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 35A (Tc), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Obsolete, Packaging: Bulk, Manufacturer: Rochester Electronics, LLC.

Preis FDD068AN03L ab 0 EUR bis 0 EUR

FDD068AN03L
Hersteller: FAIRCHILD
TO-252
FD(D,U)068AN03L.pdf FAIRS37161-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7 FAIRS37161-1.pdf?t.download=true&u=5oefqw
21000 Stücke
FDD068AN03L
Hersteller: fairchild
to-252/d-pak
FD(D,U)068AN03L.pdf FAIRS37161-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7 FAIRS37161-1.pdf?t.download=true&u=5oefqw
30000 Stücke
FDD068AN03L
Hersteller: FAIRCHILD
D-PAK/ TO-252
FD(D,U)068AN03L.pdf FAIRS37161-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7 FAIRS37161-1.pdf?t.download=true&u=5oefqw
9500 Stücke
FDD068AN03L
FDD068AN03L
Hersteller: Rochester Electronics, LLC
Description: N-CHANNEL POWER MOSFET
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 80W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2.525pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FAIRS37161-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7
auf Bestellung 8203 Stücke
Lieferzeit 21-28 Tag (e)
FDD068AN03L
FDD068AN03L
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 30V 35A D-PAK
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 80W
Input Capacitance (Ciss) (Max) @ Vds: 2525pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 35A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
FD(D,U)068AN03L.pdf
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FDD068AN03L
FDD068AN03L
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 30V 17A/35A TO252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2.525pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V
Power Dissipation (Max): 80W (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Rochester Electronics, LLC
FAIRS37161-1.pdf?t.download=true&u=5oefqw
auf Bestellung 8203 Stücke
Lieferzeit 21-28 Tag (e)