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FDD10AN06A0

FDD10AN06A0 ONSEMI

FDD10AN06A0.pdf Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1836 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
31+2.37 EUR
35+ 2.04 EUR
43+ 1.7 EUR
45+ 1.62 EUR
500+ 1.56 EUR
Mindestbestellmenge: 31
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Technische Details FDD10AN06A0 ONSEMI

Description: MOSFET N-CH 60V 11A/50A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V, Power Dissipation (Max): 135W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V.

Weitere Produktangebote FDD10AN06A0 nach Preis ab 1.56 EUR bis 4.65 EUR

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FDD10AN06A0 FDD10AN06A0 Hersteller : ONSEMI FDD10AN06A0.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1836 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
31+2.37 EUR
35+ 2.04 EUR
43+ 1.7 EUR
45+ 1.62 EUR
500+ 1.56 EUR
Mindestbestellmenge: 31
FDD10AN06A0 FDD10AN06A0 Hersteller : onsemi / Fairchild FDD10AN06A0_D-2312162.pdf MOSFET 60V 50a .15 Ohms/VGS=1V
auf Bestellung 9870 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
12+4.65 EUR
14+ 3.9 EUR
100+ 3.09 EUR
250+ 3.07 EUR
500+ 2.63 EUR
1000+ 2.25 EUR
Mindestbestellmenge: 12
FDD10AN06A0 FDD10AN06A0 Hersteller : ON Semiconductor fdd10an06-f085jp-d.pdf Trans MOSFET N-CH 60V 11A Automotive 3-Pin(2+Tab) DPAK T/R
auf Bestellung 37500 Stücke:
Lieferzeit 14-21 Tag (e)
FDD10AN06A0
Produktcode: 149870 		ONSM-S-A0003157815-1.pdf?t.download=true&u=5oefqw Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
FDD10AN06A0 FDD10AN06A0 Hersteller : onsemi ONSM-S-A0003157815-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 11A/50A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
Produkt ist nicht verfügbar
FDD10AN06A0 FDD10AN06A0 Hersteller : onsemi ONSM-S-A0003157815-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 11A/50A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
Produkt ist nicht verfügbar