FDD10AN06A0 ONSEMI
Hersteller: ONSEMICategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1792 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 35+ | 2.04 EUR |
| 38+ | 1.90 EUR |
| 41+ | 1.74 EUR |
| 44+ | 1.64 EUR |
| 500+ | 1.57 EUR |
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Technische Details FDD10AN06A0 ONSEMI
Description: MOSFET N-CH 60V 11A/50A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V, Power Dissipation (Max): 135W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V.
Weitere Produktangebote FDD10AN06A0 nach Preis ab 1.31 EUR bis 3.89 EUR
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FDD10AN06A0 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 135W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 135W Case: DPAK Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 4.6nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1792 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD10AN06A0 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 11A/50A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V |
auf Bestellung 2237 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD10AN06A0 | Hersteller : onsemi / Fairchild |
MOSFETs 60V 50a .15 Ohms/VGS=1V |
auf Bestellung 8270 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD10AN06A0 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 11A Automotive 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDD10AN06A0 | Hersteller : ON-Semicoductor |
N-Channel 60V 11A (Ta), 50A (Tc) 135W (Tc) Surface Mount TO-252AA FDD10AN06A0-F085; FDD10AN06A0; FDD10AN06A0 TFDD10an06a0 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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FDD10AN06A0 Produktcode: 149870
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FDD10AN06A0 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 11A/50A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V |
Produkt ist nicht verfügbar |