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FDD3570

FDD3570 Fairchild Semiconductor

FAIRS43390-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 80V 10A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 3.4W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V
auf Bestellung 8926 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
513+1.53 EUR
Mindestbestellmenge: 513
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Technische Details FDD3570 Fairchild Semiconductor

Description: MOSFET N-CH 80V 10A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V, Power Dissipation (Max): 3.4W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V.

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FDD3570 Hersteller : FAIRCHILD FDD3570.pdf FAIRS43390-1.pdf?t.download=true&u=5oefqw 07+ TO-252
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
FDD3570 Hersteller : FAIRCHILD FDD3570.pdf FAIRS43390-1.pdf?t.download=true&u=5oefqw D-PAK/ TO-252
auf Bestellung 9500 Stücke:
Lieferzeit 21-28 Tag (e)
FDD3570 Hersteller : FAIRCHILD FDD3570.pdf FAIRS43390-1.pdf?t.download=true&u=5oefqw TO-252
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
FDD3570 FDD3570 Hersteller : onsemi FDD3570.pdf Description: MOSFET N-CH 80V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 3.4W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V
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