FDD4N60NZ

verfügbar/auf Bestellung
auf Bestellung 179 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 179 Stücke

Lieferzeit 14-28 Tag (e)
Technische Details FDD4N60NZ
Description: MOSFET N CH 600V 3.4A DPAK, Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 250µA, Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.7A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc), Drain to Source Voltage (Vdss): 600V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Supplier Device Package: DPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 114W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V, Vgs (Max): ±25V.
Preis FDD4N60NZ ab 1.24 EUR bis 2.57 EUR
FDD4N60NZ Hersteller: onsemi Description: MOSFET N-CH 600V 3.4A DPAK Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.7A, 10V Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Packaging: Cut Tape (CT) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 ![]() |
auf Bestellung 2368 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
|
||||||||||
FDD4N60NZ Hersteller: ON Semiconductor Trans MOSFET N-CH 600V 3.4A 3-Pin(2+Tab) DPAK T/R ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|
|||||||||||
FDD4N60NZ Hersteller: ON Semiconductor ![]() ![]() |
8284 Stücke |
|
|
||||||||||
FDD4N60NZ Hersteller: ON Semiconductor / Fairchild MOSFET 2.5A Output Current GateDrive Optocopler ![]() |
auf Bestellung 122 Stücke ![]() Lieferzeit 14-28 Tag (e) |
|
|
||||||||||
FDD4N60NZ Hersteller: onsemi Description: MOSFET N-CH 600V 3.4A DPAK Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.7A, 10V Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|
|||||||||||
FDD4N60NZ Hersteller: Fairchild Semiconductor Description: POWER FIELD-EFFECT TRANSISTOR, 3 Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252, (D-Pak) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.7A, 10V Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 ![]() ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|
|||||||||||
FDD4N60NZ Hersteller: ON Semiconductor Description: MOSFET N CH 600V 3.4A DPAK Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V Vgs(th) (Max) @ Id: 5V @ 250µA Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.7A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) Drain to Source Voltage (Vdss): 600V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 114W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±25V ![]() |
auf Bestellung 2505 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
|