FDD4N60NZ

FDD4N60NZ

FDD4N60NZ

Hersteller: onsemi / Fairchild
MOSFET 2.5A Output Current GateDrive Optocopler
FDD4N60NZ_D-2311943.pdf
verfügbar/auf Bestellung
auf Bestellung 179 Stücke
Lieferzeit 14-28 Tag (e)

21+ 2.52 EUR
23+ 2.27 EUR
100+ 1.77 EUR
500+ 1.46 EUR

Technische Details FDD4N60NZ

Description: MOSFET N CH 600V 3.4A DPAK, Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 250µA, Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.7A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc), Drain to Source Voltage (Vdss): 600V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Supplier Device Package: DPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 114W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V, Vgs (Max): ±25V.

Preis FDD4N60NZ ab 1.24 EUR bis 2.57 EUR

FDD4N60NZ
FDD4N60NZ
Hersteller: onsemi
Description: MOSFET N-CH 600V 3.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
fdd4n60nz-d.pdf
auf Bestellung 2368 Stücke
Lieferzeit 21-28 Tag (e)
11+ 2.57 EUR
12+ 2.3 EUR
100+ 1.79 EUR
500+ 1.48 EUR
1000+ 1.24 EUR
FDD4N60NZ
FDD4N60NZ
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 3.4A 3-Pin(2+Tab) DPAK T/R
363309014802028fdd4n60nz.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FDD4N60NZ
Hersteller: ON Semiconductor

fdd4n60nz-d.pdf FDD4N60NZ-D.pdf
8284 Stücke
FDD4N60NZ
FDD4N60NZ
Hersteller: ON Semiconductor / Fairchild
MOSFET 2.5A Output Current GateDrive Optocopler
FDD4N60NZ_D-2311943.pdf
auf Bestellung 122 Stücke
Lieferzeit 14-28 Tag (e)
FDD4N60NZ
FDD4N60NZ
Hersteller: onsemi
Description: MOSFET N-CH 600V 3.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
fdd4n60nz-d.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FDD4N60NZ
FDD4N60NZ
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 3
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252, (D-Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
fdd4n60nz-d.pdf FDD4N60NZ-D.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FDD4N60NZ
FDD4N60NZ
Hersteller: ON Semiconductor
Description: MOSFET N CH 600V 3.4A DPAK
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 114W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Vgs (Max): ±25V
FDD4N60NZ-D.pdf
auf Bestellung 2505 Stücke
Lieferzeit 21-28 Tag (e)