FDD4N60NZ onsemi / Fairchild
auf Bestellung 7629 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 2.65 EUR |
| 22+ | 2.39 EUR |
| 100+ | 1.86 EUR |
| 500+ | 1.54 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDD4N60NZ onsemi / Fairchild
Description: MOSFET N-CH 600V 3.4A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.7A, 10V, Power Dissipation (Max): 114W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V.
Weitere Produktangebote FDD4N60NZ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| FDD4N60NZ | Hersteller : ON Semiconductor |
 |
auf Bestellung 8284 Stücke: Lieferzeit 21-28 Tag (e) |
||
 |
FDD4N60NZ | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 3.4A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|
 |
FDD4N60NZ | Hersteller : onsemi |
Description: MOSFET N-CH 600V 3.4A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.7A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V |
Produkt ist nicht verfügbar |
|
|
|
FDD4N60NZ | Hersteller : onsemi |
Description: MOSFET N-CH 600V 3.4A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.7A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V |
Produkt ist nicht verfügbar |