FDD5353

FDD5353

Hersteller: ONSEMI
Material: FDD5353 SMD N channel transistors
fdd5353-d.pdf FDD5353-D.pdf
verfügbar/auf Bestellung
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen

Technische Details FDD5353

Description: MOSFET N-CH 60V 11.5A/50A DPAK, Manufacturer: onsemi, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10.7A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 30V, Power Dissipation (Max): 3.1W (Ta), 69W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: D-PAK (TO-252AA), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Base Part Number: FDD535.

Preis FDD5353 ab 0 EUR bis 0 EUR

FDD5353
Hersteller: ONSEMI
Material: FDD5353 SMD N channel transistors
fdd5353-d.pdf FDD5353-D.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FDD5353
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 60V 11.5A 3-Pin(2+Tab) DPAK T/R
fdd5353-d.pdf FDD5353-D.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FDD5353
FDD5353
Hersteller: ON Semiconductor / Fairchild
MOSFET 60V N-Channel PowerTrench
FDD5353-D-1807002.pdf
auf Bestellung 2430 Stücke
Lieferzeit 14-28 Tag (e)
FDD5353
FDD5353
Hersteller: onsemi / Fairchild
MOSFET 60V N-Channel PowerTrench
FDD5353_D-2312006.pdf
auf Bestellung 2500 Stücke
Lieferzeit 14-28 Tag (e)
FDD5353
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 60V 11.5A 3-Pin(2+Tab) DPAK T/R
fdd5353-d.pdf FDD5353-D.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FDD5353
FDD5353
Hersteller: ON Semiconductor
Description: MOSFET N-CH 60V 11.5A/50A DPAK
Manufacturer: onsemi
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10.7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 30V
Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: FDD535
fdd5353-d.pdf
auf Bestellung 3756 Stücke
Lieferzeit 21-28 Tag (e)
FDD5353
FDD5353
Hersteller: ON Semiconductor
Description: MOSFET N-CH 60V 11.5A DPAK
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10.7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 30V
Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
FDD5353-D.pdf
auf Bestellung 4871 Stücke
Lieferzeit 21-28 Tag (e)
FDD5353
FDD5353
Hersteller: ON Semiconductor
Description: MOSFET N-CH 60V 11.5A/50A DPAK
Manufacturer: onsemi
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10.7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 30V
Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: FDD535
fdd5353-d.pdf
auf Bestellung 3756 Stücke
Lieferzeit 21-28 Tag (e)