FDD5612
FDD5612
Hersteller: FAIRCHILDN-Channel 60V 5.4A (Ta) 3.8W (Ta), 42W (Tc) Surface Mount TO-252-3 Trans. FDD5612 DPAK TFDD5612
Anzahl je Verpackung: 10 Stücke



verfügbar/auf Bestellung
auf Bestellung 100 Stücke
Lieferzeit 7-14 Tag (e)
auf Bestellung 100 Stücke

Lieferzeit 7-14 Tag (e)
Technische Details FDD5612
Description: MOSFET N-CH 60V 5.4A DPAK, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 3.8W (Ta), 42W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 30V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Rds On (Max) @ Id, Vgs: 55mOhm @ 5.4A, 10V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), Drain to Source Voltage (Vdss): 60V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Mounting Type: Surface Mount, Supplier Device Package: TO-252-3, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63.
Preis FDD5612 ab 0.5 EUR bis 1.39 EUR
FDD5612 Hersteller: ON Semiconductor Trans MOSFET N-CH 60V 18A 3-Pin(2+Tab) DPAK T/R ![]() ![]() ![]() |
auf Bestellung 2500 Stücke ![]() Lieferzeit 14-21 Tag (e) |
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FDD5612 Hersteller: ON Semiconductor / Fairchild MOSFET 60V N-Ch PowerTrench ![]() |
auf Bestellung 3531 Stücke ![]() Lieferzeit 14-28 Tag (e) |
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FDD5612 Hersteller: onsemi / Fairchild MOSFET 60V N-Ch PowerTrench ![]() |
auf Bestellung 110 Stücke ![]() Lieferzeit 14-28 Tag (e) |
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FDD5612 Hersteller: ON Semiconductor Trans MOSFET N-CH 60V 18A 3-Pin(2+Tab) DPAK T/R ![]() ![]() ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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FDD5612 Hersteller: onsemi Description: MOSFET N-CH 60V 5.4A TO252-3 Supplier Device Package: TO-252AA Mounting Type: Surface Mount Power Dissipation (Max): 3.8W (Ta), 42W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 30V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 55mOhm @ 5.4A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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FDD5612 Hersteller: Fairchild Semiconductor Description: POWER FIELD-EFFECT TRANSISTOR, 1 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 3.8W (Ta), 42W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 30V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 55mOhm @ 5.4A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Bulk ![]() |
auf Bestellung 13022 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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FDD5612 Hersteller: onsemi Description: MOSFET N-CH 60V 5.4A TO252-3 Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 5.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 30V Power Dissipation (Max): 3.8W (Ta), 42W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 ![]() |
auf Bestellung 207 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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FDD5612 Hersteller: ON Semiconductor Description: MOSFET N-CH 60V 5.4A DPAK Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 3.8W (Ta), 42W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 30V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 55mOhm @ 5.4A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 ![]() |
auf Bestellung 909 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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