FDD5612

FDD5612

Hersteller: FAIRCHILD
N-Channel 60V 5.4A (Ta) 3.8W (Ta), 42W (Tc) Surface Mount TO-252-3 Trans. FDD5612 DPAK TFDD5612
Anzahl je Verpackung: 10 Stücke

fdd5612-d.pdf FAIR-S-A0002365657-1.pdf?t.download=true&u=5oefqw FDD5612-D.PDF
verfügbar/auf Bestellung
auf Bestellung 100 Stücke
Lieferzeit 7-14 Tag (e)

28+ 1.12 EUR

Technische Details FDD5612

Description: MOSFET N-CH 60V 5.4A DPAK, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 3.8W (Ta), 42W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 30V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Rds On (Max) @ Id, Vgs: 55mOhm @ 5.4A, 10V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), Drain to Source Voltage (Vdss): 60V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Mounting Type: Surface Mount, Supplier Device Package: TO-252-3, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63.

Preis FDD5612 ab 0.5 EUR bis 1.39 EUR

FDD5612
Hersteller: ON Semiconductor
Trans MOSFET N-CH 60V 18A 3-Pin(2+Tab) DPAK T/R
fdd5612-d.pdf FAIR-S-A0002365657-1.pdf?t.download=true&u=5oefqw FDD5612-D.PDF
auf Bestellung 2500 Stücke
Lieferzeit 14-21 Tag (e)
116+ 1.39 EUR
137+ 1.13 EUR
139+ 1.07 EUR
181+ 0.79 EUR
250+ 0.73 EUR
500+ 0.63 EUR
1000+ 0.5 EUR
FDD5612
FDD5612
Hersteller: ON Semiconductor / Fairchild
MOSFET 60V N-Ch PowerTrench
FDD5612_D-1806758.pdf
auf Bestellung 3531 Stücke
Lieferzeit 14-28 Tag (e)
FDD5612
FDD5612
Hersteller: onsemi / Fairchild
MOSFET 60V N-Ch PowerTrench
FDD5612_D-2312477.pdf
auf Bestellung 110 Stücke
Lieferzeit 14-28 Tag (e)
FDD5612
Hersteller: ON Semiconductor
Trans MOSFET N-CH 60V 18A 3-Pin(2+Tab) DPAK T/R
fdd5612-d.pdf FAIR-S-A0002365657-1.pdf?t.download=true&u=5oefqw FDD5612-D.PDF
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FDD5612
FDD5612
Hersteller: onsemi
Description: MOSFET N-CH 60V 5.4A TO252-3
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Power Dissipation (Max): 3.8W (Ta), 42W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
fdd5612-d.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FDD5612
FDD5612
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
FAIR-S-A0002365657-1.pdf?t.download=true&u=5oefqw
auf Bestellung 13022 Stücke
Lieferzeit 21-28 Tag (e)
FDD5612
FDD5612
Hersteller: onsemi
Description: MOSFET N-CH 60V 5.4A TO252-3
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 30V
Power Dissipation (Max): 3.8W (Ta), 42W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
fdd5612-d.pdf
auf Bestellung 207 Stücke
Lieferzeit 21-28 Tag (e)
FDD5612
FDD5612
Hersteller: ON Semiconductor
Description: MOSFET N-CH 60V 5.4A DPAK
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Supplier Device Package: TO-252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
FDD5612-D.PDF
auf Bestellung 909 Stücke
Lieferzeit 21-28 Tag (e)