FDD5612 ONSEMI

Description: MOSFET N-CH 60V 5.4A TO252-3, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 3.8W (Ta), 42W (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 5.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).