FDD6030L Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: POWER FIELD-EFFECT TRANSISTOR, 5
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 12A, 10V
Power Dissipation (Max): 3.2W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
auf Bestellung 637001 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 278+ | 1.75 EUR |
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Technische Details FDD6030L Fairchild Semiconductor
Description: MOSFET N-CH 30V 12A/50A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 14.5mOhm @ 12A, 10V, Power Dissipation (Max): 3.2W (Ta), 56W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V.
Weitere Produktangebote FDD6030L
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FDD6030L | Hersteller : ON Semiconductor / Fairchild |
MOSFET 30V N-Channel Power Trench |
auf Bestellung 4703 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 1689 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDD6030L | Hersteller : FAIRCHILD |
D-PAK/ TO-252 |
auf Bestellung 9500 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDD6030L | Hersteller : FAIRCHILD |
TO-252 |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDD6030L | Hersteller : FSC |
06+ TO2652 |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDD6030L | Hersteller : FSC |
09+ |
auf Bestellung 10059 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD6030L | Hersteller : onsemi |
Description: MOSFET N-CH 30V 12A/50A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 12A, 10V Power Dissipation (Max): 3.2W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V |
Produkt ist nicht verfügbar |
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FDD6030L | Hersteller : onsemi |
Description: MOSFET N-CH 30V 12A/50A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 12A, 10V Power Dissipation (Max): 3.2W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V |
Produkt ist nicht verfügbar |