FDD6030L
Technische Details FDD6030L
Description: MOSFET N-CH 30V 12A DPAK, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Supplier Device Package: D-PAK (TO-252), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 3.2W (Ta), 56W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V, Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 14.5mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), Part Status: Active, Packaging: Tape & Reel (TR).
Preis FDD6030L ab 0 EUR bis 0 EUR
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FDD6030L Hersteller: FSC 06+ TO2652 
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2500 Stücke |
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FDD6030L Hersteller: FAIRCHILD TO-252
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21000 Stücke |
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FDD6030L Hersteller: FAIRCHILD D-PAK/ TO-252
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9500 Stücke |
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FDD6030L Hersteller: FAI 0050+
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1689 Stücke |
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 Hersteller: ON Semiconductor / Fairchild MOSFET 30V N-Channel Power Trench
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auf Bestellung 4703 Stücke  Lieferzeit 14-28 Tag (e) |
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 Hersteller: ON Semiconductor Description: MOSFET N-CH 30V 12A DPAK Power Dissipation (Max): 3.2W (Ta), 56W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V Rds On (Max) @ Id, Vgs: 14.5mOhm @ 12A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) Part Status: Active Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ)
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auf Bestellung 2194 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: ON Semiconductor Description: MOSFET N-CH 30V 12A DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 3.2W (Ta), 56W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14.5mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) Part Status: Active Packaging: Tape & Reel (TR)
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