FDD850N10L ON Semiconductor
auf Bestellung 12500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.65 EUR |
| 5000+ | 0.59 EUR |
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Technische Details FDD850N10L ON Semiconductor
Description: MOSFET N-CH 100V 15.7A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.7A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 12A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 25 V.
Weitere Produktangebote FDD850N10L nach Preis ab 0.58 EUR bis 2.09 EUR
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FDD850N10L | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 100V 15.7A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 12500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD850N10L | Hersteller : onsemi |
Description: MOSFET N-CH 100V 15.7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.7A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 12A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 25 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD850N10L | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11.1A Power dissipation: 50W Case: DPAK Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2167 Stücke: Lieferzeit 7-14 Tag (e) |
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FDD850N10L | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11.1A Power dissipation: 50W Case: DPAK Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2167 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD850N10L | Hersteller : onsemi |
Description: MOSFET N-CH 100V 15.7A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.7A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 12A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 25 V |
auf Bestellung 8497 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD850N10L | Hersteller : onsemi / Fairchild |
MOSFETs 100V N-Channel PowerTrench MOSFET |
auf Bestellung 4873 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD850N10L | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 15.7A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 12500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD850N10L | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 15.7A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |