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FDD86326

FDD86326 onsemi


fdd86326-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 80V 8A/37A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V
auf Bestellung 14960 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+2.22 EUR
5000+ 2.14 EUR
Mindestbestellmenge: 2500
Produktrezensionen
Produktbewertung abgeben

Technische Details FDD86326 onsemi

Description: MOSFET N-CH 80V 8A/37A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 37A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V, Power Dissipation (Max): 3.1W (Ta), 62W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V.

Weitere Produktangebote FDD86326 nach Preis ab 2.26 EUR bis 4.99 EUR

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FDD86326 FDD86326 Hersteller : onsemi fdd86326-d.pdf Description: MOSFET N-CH 80V 8A/37A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V
auf Bestellung 14960 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.91 EUR
10+ 4.09 EUR
100+ 3.26 EUR
500+ 2.76 EUR
1000+ 2.34 EUR
Mindestbestellmenge: 6
FDD86326 FDD86326 Hersteller : onsemi / Fairchild FDD86326_D-2312230.pdf MOSFET 80V N-Channel PowerTrench MOSFET
auf Bestellung 19557 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
11+4.99 EUR
13+ 4.16 EUR
100+ 3.3 EUR
250+ 3.04 EUR
500+ 2.76 EUR
1000+ 2.38 EUR
2500+ 2.26 EUR
Mindestbestellmenge: 11
FDD86326 FDD86326 Hersteller : ON Semiconductor fdd86326.pdf Trans MOSFET N-CH Si 80V 8A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
FDD86326 FDD86326 Hersteller : ON Semiconductor fdd86326.pdf Trans MOSFET N-CH Si 80V 8A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar