FDD86326 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 80V 8A/37A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V
Produktrezensionen
Produktbewertung abgeben
Technische Details FDD86326 onsemi
Description: MOSFET N-CH 80V 8A/37A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 37A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V, Power Dissipation (Max): 3.1W (Ta), 62W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V.
Weitere Produktangebote FDD86326 nach Preis ab 1.37 EUR bis 4.45 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDD86326 | onsemi / Fairchild |
MOSFETs 80V N-Channel PowerTrench MOSFET |
auf Bestellung 28280 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
FDD86326 | onsemi |
MOSFETs 80V N-Channel PowerTrench MOSFET |
auf Bestellung 26525 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
FDD86326 | onsemi |
Description: MOSFET N-CH 80V 8A/37A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 37A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V Power Dissipation (Max): 3.1W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V |
auf Bestellung 9700 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDD86326 |
|
Hersteller: onsemi / Fairchild
MOSFETs 80V N-Channel PowerTrench MOSFET
MOSFETs 80V N-Channel PowerTrench MOSFET
auf Bestellung 28280 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.24 EUR |
| 10+ | 2.01 EUR |
| 100+ | 1.76 EUR |
| 500+ | 1.62 EUR |
| 1000+ | 1.47 EUR |
| 2500+ | 1.37 EUR |
| FDD86326 |
|
Hersteller: onsemi
MOSFETs 80V N-Channel PowerTrench MOSFET
MOSFETs 80V N-Channel PowerTrench MOSFET
auf Bestellung 26525 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.71 EUR |
| 10+ | 2.62 EUR |
| 100+ | 2.02 EUR |
| 500+ | 1.78 EUR |
| 1000+ | 1.57 EUR |
| 2500+ | 1.44 EUR |
| FDD86326 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 8A/37A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V
Description: MOSFET N-CH 80V 8A/37A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V
auf Bestellung 9700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.45 EUR |
| 10+ | 2.89 EUR |
| 100+ | 1.99 EUR |
| 500+ | 1.61 EUR |
| 1000+ | 1.48 EUR |