FDD86369 ON Semiconductor
auf Bestellung 12500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.59 EUR |
5000+ | 0.57 EUR |
10000+ | 0.54 EUR |
12500+ | 0.52 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDD86369 ON Semiconductor
Description: MOSFET N-CH 80V 90A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V, Power Dissipation (Max): 150W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote FDD86369 nach Preis ab 0.69 EUR bis 2.62 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FDD86369 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 80V 90A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 12500 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
FDD86369 | Hersteller : onsemi |
Description: MOSFET N-CH 80V 90A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
FDD86369 | Hersteller : onsemi / Fairchild | MOSFET MV7 80/20V 1000A N-chanPwrTrnchMOSFET |
auf Bestellung 1420 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
FDD86369 | Hersteller : onsemi |
Description: MOSFET N-CH 80V 90A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 13478 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
FDD86369 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 80V 90A Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |