FDD86369 ON Semiconductor
auf Bestellung 7300 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 160+ | 0.91 EUR |
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Technische Details FDD86369 ON Semiconductor
Description: MOSFET N-CH 80V 90A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V, Power Dissipation (Max): 150W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote FDD86369 nach Preis ab 0.75 EUR bis 3.1 EUR
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FDD86369 | Hersteller : onsemi |
 Description: MOSFET N-CH 80V 90A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD86369 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 90A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 7300 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD86369 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 90A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 502 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD86369 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 90A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 87500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD86369 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 90A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 335 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD86369 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 90A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD86369 | Hersteller : onsemi / Fairchild |
MOSFETs MV7 80/20V 1000A N-chanPwrTrnchMOSFET |
auf Bestellung 3453 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD86369 | Hersteller : onsemi |
Description: MOSFET N-CH 80V 90A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 10520 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD86369 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 90A Automotive 3-Pin(2+Tab) DPAK T/R |
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FDD86369 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 90A 3-Pin(2+Tab) DPAK T/R |
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FDD86369 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 90A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| FDD86369 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 90A; 150W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 90A Power dissipation: 150W Case: DPAK Gate-source voltage: ±20V On-state resistance: 7.9mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| FDD86369 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 90A; 150W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 90A Power dissipation: 150W Case: DPAK Gate-source voltage: ±20V On-state resistance: 7.9mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |