FDD86581-F085

FDD86581-F085

Hersteller: ON Semiconductor

fdd86581_f085-d.pdf
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Technische Details FDD86581-F085

Description: MOSFET N-CH 60V 25A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V, Power Dissipation (Max): 48.4W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D-PAK (TO-252), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 30 V.

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FDD86581-F085
FDD86581-F085
Hersteller: ON Semiconductor
Trans MOSFET N-CH 60V 25A Automotive 3-Pin(2+Tab) DPAK T/R
fdd86581_f085-d.pdf
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FDD86581-F085
FDD86581-F085
Hersteller: ON Semiconductor / Fairchild
MOSFET 60V NChnl Power Trench MOSFET
FDD86581_F085-D-1807230.pdf
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Lieferzeit 14-28 Tag (e)
FDD86581-F085
FDD86581-F085
Hersteller: onsemi
Description: MOSFET N-CH 60V 25A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Power Dissipation (Max): 48.4W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D-PAK (TO-252)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 30 V
fdd86581_f085-d.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FDD86581-F085
FDD86581-F085
Hersteller: onsemi
Description: MOSFET N-CH 60V 25A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Power Dissipation (Max): 48.4W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D-PAK (TO-252)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 30 V
fdd86581_f085-d.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen