FDD86581-F085 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 60V 25A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Power Dissipation (Max): 48.4W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 30 V
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.99 EUR |
| 5000+ | 0.93 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2500 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details FDD86581-F085 onsemi
Description: MOSFET N-CH 60V 25A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V, Power Dissipation (Max): 48.4W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 30 V.
Weitere Produktangebote FDD86581-F085 nach Preis ab 1.06 EUR bis 3.56 EUR
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FDD86581-F085 | ON Semiconductor |
Trans MOSFET N-CH 60V 25A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD86581-F085 | ON Semiconductor |
Trans MOSFET N-CH 60V 25A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 2064 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD86581-F085 | ON Semiconductor |
Trans MOSFET N-CH 60V 25A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 2078 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD86581-F085 | onsemi / Fairchild |
MOSFET 60V NChnl Power Trench MOSFET |
auf Bestellung 29970 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD86581-F085 | onsemi |
Description: MOSFET N-CH 60V 25A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V Power Dissipation (Max): 48.4W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 30 V |
auf Bestellung 9781 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDD86581-F085 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 60V 25A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 60V 25A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 461+ | 1.45 EUR |
| 513+ | 1.29 EUR |
| 1000+ | 1.15 EUR |
| FDD86581-F085 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 60V 25A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 60V 25A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 2064 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 461+ | 1.45 EUR |
| 513+ | 1.29 EUR |
| 1000+ | 1.15 EUR |
| FDD86581-F085 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 60V 25A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 60V 25A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 2078 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 461+ | 1.45 EUR |
| 513+ | 1.29 EUR |
| 1000+ | 1.15 EUR |
| FDD86581-F085 |
|
Hersteller: onsemi / Fairchild
MOSFET 60V NChnl Power Trench MOSFET
MOSFET 60V NChnl Power Trench MOSFET
auf Bestellung 29970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.51 EUR |
| 10+ | 2.24 EUR |
| 100+ | 1.74 EUR |
| 500+ | 1.44 EUR |
| 1000+ | 1.15 EUR |
| 2500+ | 1.07 EUR |
| 5000+ | 1.06 EUR |
| FDD86581-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 25A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Power Dissipation (Max): 48.4W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 30 V
Description: MOSFET N-CH 60V 25A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Power Dissipation (Max): 48.4W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 30 V
auf Bestellung 9781 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.56 EUR |
| 10+ | 2.26 EUR |
| 100+ | 1.52 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 1.11 EUR |