FDD8870 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 21A/160A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 15 V
Description: MOSFET N-CH 30V 21A/160A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 15 V
auf Bestellung 3375 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.17 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDD8870 onsemi
Description: MOSFET N-CH 30V 21A/160A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 160A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 35A, 10V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 15 V.
Weitere Produktangebote FDD8870 nach Preis ab 1.13 EUR bis 3.32 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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FDD8870 | Hersteller : onsemi / Fairchild | MOSFET 30V N-Channel PowerTrench |
auf Bestellung 2993 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD8870 | Hersteller : onsemi |
Description: MOSFET N-CH 30V 21A/160A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 160A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 35A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 15 V |
auf Bestellung 4607 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD8870 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 30V 21A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD8870 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 30V 21A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD8870 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 30V 21A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2444 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD8870 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 30V 21A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2444 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD8870 | Hersteller : FAIRCHILD |
auf Bestellung 5600 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD8870 | Hersteller : FAIRCHILD | 07+ TO-252 |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD8870 | Hersteller : FAIRCHILD | D-PAK/ TO-252 |
auf Bestellung 9500 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD8870 | Hersteller : FAIRCHILD | TO-252 |
auf Bestellung 31000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD8870 Produktcode: 103193 |
Transistoren > MOSFET N-CH ZCODE: 8541290010 |
Produkt ist nicht verfügbar
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FDD8870 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 30V 21A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FDD8870 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 160W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Power dissipation: 160W Case: DPAK Gate-source voltage: ±20V On-state resistance: 6.3mΩ Mounting: SMD Gate charge: 118nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDD8870 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 160W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Power dissipation: 160W Case: DPAK Gate-source voltage: ±20V On-state resistance: 6.3mΩ Mounting: SMD Gate charge: 118nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |