FDG330P Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: MOSFET P-CH 12V 2A SC88
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2A, 4.5V
Power Dissipation (Max): 480mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Part Status: Active
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 477 pF @ 6 V
auf Bestellung 219496 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 807+ | 0.6 EUR |
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Technische Details FDG330P Fairchild Semiconductor
Description: MOSFET P-CH 12V 2A SC88, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 2A, 4.5V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SC-88 (SC-70-6), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 477 pF @ 6 V.
Weitere Produktangebote FDG330P nach Preis ab 0.6 EUR bis 0.6 EUR
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FDG330P | Hersteller : onsemi |
Description: SMALL SIGNAL FIELD-EFFECT TRANSI Packaging: Bulk Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2A, 4.5V Power Dissipation (Max): 480mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88 (SC-70-6) Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 477 pF @ 6 V |
auf Bestellung 30250 Stücke: Lieferzeit 10-14 Tag (e) |
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FDG330P | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 12V 2A 6-Pin SC-70 T/R |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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FDG330P | Hersteller : ONSEMI |
Description: ONSEMI - FDG330P - MOSFET, P, SMD, SC70-6 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 219496 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDG330P |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDG330P | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 12V 2A 6-Pin SC-70 T/R |
Produkt ist nicht verfügbar |
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FDG330P | Hersteller : onsemi |
Description: MOSFET P-CH 12V 2A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88 (SC-70-6) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 477 pF @ 6 V |
Produkt ist nicht verfügbar |
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FDG330P | Hersteller : onsemi / Fairchild |
MOSFET P-Ch PowerTrench Specified 1.8V |
Produkt ist nicht verfügbar |