FDMB2307NZ onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 6MLP
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
FET Feature: Logic Level Gate
Supplier Device Package: 6-MLP (2x3)
Description: MOSFET 2N-CH 6MLP
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
FET Feature: Logic Level Gate
Supplier Device Package: 6-MLP (2x3)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.64 EUR |
6000+ | 0.6 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMB2307NZ onsemi
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.7A; Idm: 40A; 2.2W; WDFN8, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 9.7A, Pulsed drain current: 40A, Power dissipation: 2.2W, Case: WDFN8, Gate-source voltage: ±12V, Mounting: SMD, Gate charge: 28nC, Kind of package: reel; tape, Kind of channel: enhanced, Semiconductor structure: common drain, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote FDMB2307NZ nach Preis ab 0.57 EUR bis 1.5 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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FDMB2307NZ | Hersteller : ON Semiconductor | Trans MOSFET N-CH 20V 9.7A 6-Pin WDFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMB2307NZ | Hersteller : ON Semiconductor | Trans MOSFET N-CH 20V 9.7A 6-Pin WDFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMB2307NZ | Hersteller : onsemi / Fairchild | MOSFET 20V 2xCommon Drn Nch PowerTrench MOSFET |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMB2307NZ | Hersteller : onsemi |
Description: MOSFET 2N-CH 6MLP Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V FET Feature: Logic Level Gate Supplier Device Package: 6-MLP (2x3) |
auf Bestellung 8975 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMB2307NZ | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.7A; Idm: 40A; 2.2W; WDFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 9.7A Pulsed drain current: 40A Power dissipation: 2.2W Case: WDFN8 Gate-source voltage: ±12V Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhanced Semiconductor structure: common drain Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMB2307NZ | Hersteller : ON Semiconductor | Trans MOSFET N-CH 20V 9.7A 6-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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FDMB2307NZ | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.7A; Idm: 40A; 2.2W; WDFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 9.7A Pulsed drain current: 40A Power dissipation: 2.2W Case: WDFN8 Gate-source voltage: ±12V Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhanced Semiconductor structure: common drain |
Produkt ist nicht verfügbar |