FDMB2307NZ onsemi
Hersteller: onsemiDescription: MOSFET 2N-CH 6MLP
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
FET Feature: Logic Level Gate
Supplier Device Package: 6-MLP (2x3)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.64 EUR |
| 6000+ | 0.6 EUR |
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Technische Details FDMB2307NZ onsemi
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.7A; Idm: 40A; 2.2W; WDFN8, Mounting: SMD, Pulsed drain current: 40A, Power dissipation: 2.2W, Gate charge: 28nC, Polarisation: unipolar, Drain current: 9.7A, Kind of channel: enhanced, Drain-source voltage: 20V, Type of transistor: N-MOSFET x2, Kind of package: reel; tape, Semiconductor structure: common drain, Case: WDFN8, Gate-source voltage: ±12V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote FDMB2307NZ nach Preis ab 0.68 EUR bis 2.18 EUR
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FDMB2307NZ | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 20V 9.7A 6-Pin WDFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMB2307NZ | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 20V 9.7A 6-Pin WDFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMB2307NZ | Hersteller : onsemi |
Description: MOSFET 2N-CH 6MLP Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V FET Feature: Logic Level Gate Supplier Device Package: 6-MLP (2x3) |
auf Bestellung 8975 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMB2307NZ | Hersteller : onsemi / Fairchild |
MOSFET 20V 2xCommon Drn Nch PowerTrench MOSFET |
auf Bestellung 21000 Stücke: Lieferzeit 14-28 Tag (e) |
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| FDMB2307NZ | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.7A; Idm: 40A; 2.2W; WDFN8 Mounting: SMD Pulsed drain current: 40A Power dissipation: 2.2W Gate charge: 28nC Polarisation: unipolar Drain current: 9.7A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET x2 Kind of package: reel; tape Semiconductor structure: common drain Case: WDFN8 Gate-source voltage: ±12V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMB2307NZ | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 20V 9.7A 6-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMB2307NZ | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.7A; Idm: 40A; 2.2W; WDFN8 Mounting: SMD Pulsed drain current: 40A Power dissipation: 2.2W Gate charge: 28nC Polarisation: unipolar Drain current: 9.7A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET x2 Kind of package: reel; tape Semiconductor structure: common drain Case: WDFN8 Gate-source voltage: ±12V |
Produkt ist nicht verfügbar |