FDMQ8203 onsemi
Hersteller: onsemiDescription: MOSFET 2N/2P-CH 100V/80V 12-MLP
Packaging: Cut Tape (CT)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 100V, 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V, 850pF @ 40V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 12-MLP (5x4.5)
Part Status: Active
auf Bestellung 2639 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 3.72 EUR |
| 10+ | 3.1 EUR |
| 100+ | 2.47 EUR |
| 500+ | 2.09 EUR |
| 1000+ | 1.77 EUR |
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Technische Details FDMQ8203 onsemi
Description: MOSFET 2N/2P-CH 100V/80V 12-MLP, Packaging: Tape & Reel (TR), Package / Case: 12-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N and 2 P-Channel (Full Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W, Drain to Source Voltage (Vdss): 100V, 80V, Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A, Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V, 850pF @ 40V, Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 12-MLP (5x4.5), Part Status: Active.
Weitere Produktangebote FDMQ8203 nach Preis ab 1.69 EUR bis 3.74 EUR
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| FDMQ8203 | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET x2; unipolar; 100/-80V; 6/-6A; 2.5W; WDFN12 Case: WDFN12 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 100/-80V On-state resistance: 323/191mΩ Drain current: 6/-6A Power dissipation: 2.5W Polarisation: unipolar Semiconductor structure: common drain Features of semiconductor devices: MOSFET H-Bridge Gate charge: 19/5nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N/P-MOSFET x2 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMQ8203 | Hersteller : onsemi |
Description: MOSFET 2N/2P-CH 100V/80V 12-MLP Packaging: Tape & Reel (TR) Package / Case: 12-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 100V, 80V Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V, 850pF @ 40V Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 12-MLP (5x4.5) Part Status: Active |
Produkt ist nicht verfügbar |
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| FDMQ8203 | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET x2; unipolar; 100/-80V; 6/-6A; 2.5W; WDFN12 Case: WDFN12 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 100/-80V On-state resistance: 323/191mΩ Drain current: 6/-6A Power dissipation: 2.5W Polarisation: unipolar Semiconductor structure: common drain Features of semiconductor devices: MOSFET H-Bridge Gate charge: 19/5nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N/P-MOSFET x2 |
Produkt ist nicht verfügbar |