FDMS8023S Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 26A, 10V
Power Dissipation (Max): 2.5W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 15 V
auf Bestellung 1932 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 484+ | 1.02 EUR |
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Technische Details FDMS8023S Fairchild Semiconductor
Description: MOSFET N-CH 30V 26A/49A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 49A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 26A, 10V, Power Dissipation (Max): 2.5W (Ta), 59W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 15 V.
Weitere Produktangebote FDMS8023S nach Preis ab 1.04 EUR bis 2.36 EUR
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FDMS8023S | Hersteller : onsemi |
Description: MOSFET N-CH 30V 26A/49A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 26A, 10V Power Dissipation (Max): 2.5W (Ta), 59W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 15 V |
auf Bestellung 1843 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS8023S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 26A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMS8023S | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; Power56 Polarisation: unipolar Kind of package: reel; tape Case: Power56 Mounting: SMD Power dissipation: 59W Gate charge: 57nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Drain-source voltage: 30V Drain current: 49A On-state resistance: 3.3mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMS8023S | Hersteller : onsemi |
Description: MOSFET N-CH 30V 26A/49A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 26A, 10V Power Dissipation (Max): 2.5W (Ta), 59W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 15 V |
Produkt ist nicht verfügbar |
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FDMS8023S | Hersteller : onsemi / Fairchild |
MOSFET 30V N-Channel PowerTrench SyncFET |
Produkt ist nicht verfügbar |
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| FDMS8023S | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; Power56 Polarisation: unipolar Kind of package: reel; tape Case: Power56 Mounting: SMD Power dissipation: 59W Gate charge: 57nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Drain-source voltage: 30V Drain current: 49A On-state resistance: 3.3mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |