FDMS8090 ON Semiconductor
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 22+ | 7.34 EUR |
| 24+ | 6.35 EUR |
| 25+ | 6.02 EUR |
| 100+ | 5.07 EUR |
| 250+ | 4.82 EUR |
| 500+ | 4.2 EUR |
| 1000+ | 3.94 EUR |
| 3000+ | 3.88 EUR |
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Produktbewertung abgeben
Technische Details FDMS8090 ON Semiconductor
Description: MOSFET 2N-CH 100V 10A 8MLP PWR56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.2W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 10A, Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V, Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-MLP (5x6), Power56.
Weitere Produktangebote FDMS8090 nach Preis ab 3.88 EUR bis 15.13 EUR
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FDMS8090 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 100V 10A 8-Pin Power 56 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS8090 | Hersteller : onsemi |
Description: MOSFET 2N-CH 100V 10A 8MLP PWR56 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (5x6), Power56 |
auf Bestellung 2007 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMS8090 | Hersteller : onsemi / Fairchild |
MOSFET 100V Sym Dual NCh MOSFET PowerTrench |
auf Bestellung 4251 Stücke: Lieferzeit 14-28 Tag (e) |
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FDMS8090 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 10A 8-Pin Power 56 T/R |
Produkt ist nicht verfügbar |
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FDMS8090 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 10A 8-Pin Power 56 T/R |
Produkt ist nicht verfügbar |
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FDMS8090 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 10A 8-Pin Power 56 T/R |
Produkt ist nicht verfügbar |
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| FDMS8090 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 59W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Power dissipation: 59W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMS8090 | Hersteller : onsemi |
Description: MOSFET 2N-CH 100V 10A 8MLP PWR56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (5x6), Power56 |
Produkt ist nicht verfügbar |
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| FDMS8090 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 59W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Power dissipation: 59W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |