FDMS8090 onsemi / Fairchild
| Anzahl | Preis |
|---|---|
| 1+ | 8.13 EUR |
| 10+ | 6.2 EUR |
| 25+ | 6.16 EUR |
| 100+ | 5.1 EUR |
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Technische Details FDMS8090 onsemi / Fairchild
Description: MOSFET 2N-CH 100V 10A 8MLP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.2W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 10A, Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V, Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-MLP (5x6), Power56.
Weitere Produktangebote FDMS8090 nach Preis ab 5.65 EUR bis 11.83 EUR
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FDMS8090 | Hersteller : onsemi |
 Description: MOSFET 2N-CH 100V 10A 8MLPPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (5x6), Power56 |
auf Bestellung 1456 Stücke: Lieferzeit 10-14 Tag (e) |
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