FDMS86102LZ onsemi
Hersteller: onsemi
Description: MOSFET N-CH 100V 7A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1305 pF @ 50 V
Description: MOSFET N-CH 100V 7A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1305 pF @ 50 V
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.32 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMS86102LZ onsemi
Description: MOSFET N-CH 100V 7A/22A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V, Power Dissipation (Max): 2.5W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1305 pF @ 50 V.
Weitere Produktangebote FDMS86102LZ nach Preis ab 1.31 EUR bis 4.33 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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FDMS86102LZ | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 100V 7A 8-Pin PQFN EP T/R |
auf Bestellung 730 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86102LZ | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 100V 7A 8-Pin PQFN EP T/R |
auf Bestellung 730 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86102LZ | Hersteller : onsemi / Fairchild | MOSFETs 100V N-Channel PowerTrench MOSFET |
auf Bestellung 12829 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86102LZ | Hersteller : onsemi |
Description: MOSFET N-CH 100V 7A/22A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1305 pF @ 50 V |
auf Bestellung 73835 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86102LZ | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 100V 7A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86102LZ | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 100V 7A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS86102LZ | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 100V 7A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS86102LZ | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 69W; PQFN8 Case: PQFN8 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 22A On-state resistance: 42mΩ Type of transistor: N-MOSFET Power dissipation: 69W Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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FDMS86102LZ | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 69W; PQFN8 Case: PQFN8 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 22A On-state resistance: 42mΩ Type of transistor: N-MOSFET Power dissipation: 69W |
Produkt ist nicht verfügbar |