FDMS86102LZ onsemi
Hersteller: onsemiDescription: MOSFET N-CH 100V 7A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1305 pF @ 50 V
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.46 EUR |
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Technische Details FDMS86102LZ onsemi
Description: MOSFET N-CH 100V 7A/22A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V, Power Dissipation (Max): 2.5W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1305 pF @ 50 V.
Weitere Produktangebote FDMS86102LZ nach Preis ab 1.36 EUR bis 4.73 EUR
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FDMS86102LZ | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 7A 8-Pin PQFN EP T/R |
auf Bestellung 730 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86102LZ | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 7A 8-Pin PQFN EP T/R |
auf Bestellung 730 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86102LZ | Hersteller : onsemi |
Description: MOSFET N-CH 100V 7A/22A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1305 pF @ 50 V |
auf Bestellung 56423 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86102LZ | Hersteller : onsemi / Fairchild |
MOSFET 100V N-Channel PowerTrench MOSFET |
auf Bestellung 15554 Stücke: Lieferzeit 14-28 Tag (e) |
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FDMS86102LZ | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 7A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS86102LZ | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 7A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS86102LZ | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 7A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMS86102LZ | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 69W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Power dissipation: 69W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDMS86102LZ | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 69W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Power dissipation: 69W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |