FDMS86263P onsemi
Hersteller: onsemiDescription: MOSFET P-CH 150V 4.4A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V
auf Bestellung 983 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 6.97 EUR |
| 10+ | 5.85 EUR |
| 100+ | 4.73 EUR |
| 500+ | 4.21 EUR |
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Technische Details FDMS86263P onsemi
Description: MOSFET P-CH 150V 4.4A/22A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V, Power Dissipation (Max): 2.5W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V.
Weitere Produktangebote FDMS86263P nach Preis ab 3.8 EUR bis 7.59 EUR
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FDMS86263P | Hersteller : onsemi / Fairchild |
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auf Bestellung 81232 Stücke: Lieferzeit 455-469 Tag (e) |
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FDMS86263P | Hersteller : onsemi |
Description: MOSFET P-CH 150V 4.4A/22A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V |
auf Bestellung 983 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMS86263P | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 150V 4.4A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMS86263P | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -4.4A; Idm: -70A; 2.5W Mounting: SMD Drain-source voltage: -150V Drain current: -4.4A On-state resistance: 64mΩ Type of transistor: P-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 63nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -70A Case: Power56 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMS86263P | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 150V 4.4A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS86263P | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 150V 4.4A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMS86263P | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -4.4A; Idm: -70A; 2.5W Mounting: SMD Drain-source voltage: -150V Drain current: -4.4A On-state resistance: 64mΩ Type of transistor: P-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 63nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -70A Case: Power56 |
Produkt ist nicht verfügbar |