FDP023N08B-F102 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 75V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 75A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13765 pF @ 37.5 V
Description: MOSFET N-CH 75V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 75A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13765 pF @ 37.5 V
auf Bestellung 7708 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 8.68 EUR |
50+ | 6.89 EUR |
100+ | 5.9 EUR |
500+ | 5.25 EUR |
1000+ | 4.49 EUR |
2000+ | 4.23 EUR |
5000+ | 4.06 EUR |
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Technische Details FDP023N08B-F102 onsemi
Description: MOSFET N-CH 75V 120A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.35mOhm @ 75A, 10V, Power Dissipation (Max): 245W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13765 pF @ 37.5 V.
Weitere Produktangebote FDP023N08B-F102 nach Preis ab 4.29 EUR bis 8.76 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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FDP023N08B-F102 | Hersteller : onsemi / Fairchild | MOSFET FET 75V 2.35 MOHM TO220 |
auf Bestellung 1000 Stücke: Lieferzeit 14-28 Tag (e) |
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FDP023N08B-F102 | Hersteller : ONSEMI |
Description: ONSEMI - FDP023N08B-F102 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 20529 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP023N08B-F102 | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 75V 242A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FDP023N08B-F102 | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 75V 242A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |