FDP023N08B-F102 onsemi / Fairchild
| Anzahl | Preis |
|---|---|
| 1+ | 6.42 EUR |
| 10+ | 5.1 EUR |
| 50+ | 3.56 EUR |
| 100+ | 3.26 EUR |
| 250+ | 3.24 EUR |
| 500+ | 2.92 EUR |
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Technische Details FDP023N08B-F102 onsemi / Fairchild
Description: MOSFET N-CH 75V 120A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 13765 pF @ 37.5 V, Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 3.8V @ 250µA, Power Dissipation (Max): 245W (Tc), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Rds On (Max) @ Id, Vgs: 2.35mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote FDP023N08B-F102 nach Preis ab 2.78 EUR bis 7.41 EUR
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FDP023N08B-F102 | onsemi |
 Description: MOSFET N-CH 75V 120A TO220-3Input Capacitance (Ciss) (Max) @ Vds: 13765 pF @ 37.5 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 3.8V @ 250µA Power Dissipation (Max): 245W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Rds On (Max) @ Id, Vgs: 2.35mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 760 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP023N08B-F102 | onsemi |
MOSFETs N-Channel PowerTrench MOSFET 75V, 242A, 2.35mOhm |
auf Bestellung 5386 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDP023N08B-F102 | ONN |
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auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDP023N08B-F102 |
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Hersteller: onsemi
Description: MOSFET N-CH 75V 120A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 13765 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 245W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 75V 120A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 13765 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 245W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 760 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 7.16 EUR |
| 50+ | 3.7 EUR |
| 100+ | 3.37 EUR |
| 500+ | 2.78 EUR |
| FDP023N08B-F102 |
|
Hersteller: onsemi
MOSFETs N-Channel PowerTrench MOSFET 75V, 242A, 2.35mOhm
MOSFETs N-Channel PowerTrench MOSFET 75V, 242A, 2.35mOhm
auf Bestellung 5386 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 7.41 EUR |
| 10+ | 3.84 EUR |
| 100+ | 3.27 EUR |
| 500+ | 3.08 EUR |
| FDP023N08B-F102 |
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Hersteller: ONN
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH