FDP025N06
FDP025N06
Hersteller: onsemiDescription: MOSFET N-CH 60V 120A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 14885 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 10 V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 395W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 115 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 115 Stücke
Lieferzeit 21-28 Tag (e)
Technische Details FDP025N06
Description: POWER FIELD-EFFECT TRANSISTOR, 1, Manufacturer: Fairchild Semiconductor, Package / Case: TO-220-3, Supplier Device Package: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 395W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 14.885pF @ 25V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 226nC @ 10V, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Rds On (Max) @ Id, Vgs: 2.5mOhm @ 75A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Drain to Source Voltage (Vdss): 60V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Bulk.
Preis FDP025N06 ab 8.45 EUR bis 12.87 EUR
 Hersteller: onsemi / Fairchild MOSFET 60V N-Channel PowerTrench
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auf Bestellung 86 Stücke Lieferzeit 14-28 Tag (e) |
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 Hersteller: ON Semiconductor Trans MOSFET N-CH Si 60V 265A 3-Pin(3+Tab) TO-220 Tube
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900 Stücke |
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FDP025N06 Hersteller: ON Semiconductor
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950 Stücke |
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 Hersteller: ON Semiconductor / Fairchild MOSFET 60V N-Channel PowerTrench
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auf Bestellung 28 Stücke Lieferzeit 14-28 Tag (e) |
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FDP025N06 Hersteller: ON Semiconductor Trans MOSFET N-CH Si 60V 265A 3-Pin(3+Tab) TO-220 Tube
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auf Bestellung 4 Stücke Lieferzeit 14-21 Tag (e) |
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FDP025N06 Hersteller: ON Semiconductor Trans MOSFET N-CH Si 60V 265A 3-Pin(3+Tab) TO-220 Tube
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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FDP025N06 Hersteller: Rochester Electronics, LLC Description: POWER FIELD-EFFECT TRANSISTOR, 1 Manufacturer: Fairchild Semiconductor Package / Case: TO-220-3 Supplier Device Package: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 395W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 14.885pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 226nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Rds On (Max) @ Id, Vgs: 2.5mOhm @ 75A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Bulk
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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FDP025N06 Hersteller: ON Semiconductor Description: POWER FIELD-EFFECT TRANSISTOR, 1 Supplier Device Package: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 395W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 14.885pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 226nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Rds On (Max) @ Id, Vgs: 2.5mOhm @ 75A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Bulk Package / Case: TO-220-3
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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