FDP025N06 Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 75A, 10V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14885 pF @ 25 V
auf Bestellung 1401 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 119+ | 4.19 EUR |
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Technische Details FDP025N06 Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 75A, 10V, Power Dissipation (Max): 395W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14885 pF @ 25 V.
Weitere Produktangebote FDP025N06 nach Preis ab 6.47 EUR bis 10.71 EUR
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FDP025N06 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 75A, 10V Power Dissipation (Max): 395W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14885 pF @ 25 V |
auf Bestellung 34 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP025N06 | Hersteller : onsemi / Fairchild |
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auf Bestellung 178 Stücke: Lieferzeit 14-28 Tag (e) |
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FDP025N06 | Hersteller : ON Semiconductor |
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auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDP025N06 | Hersteller : ON Semiconductor |
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auf Bestellung 950 Stücke: Lieferzeit 21-28 Tag (e) |
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FDP025N06 Produktcode: 189620 |
Transistoren > MOSFET N-CH |
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FDP025N06 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 60V 265A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FDP025N06 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 60V 265A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |