FDP054N10 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13280 pF @ 25 V
Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13280 pF @ 25 V
auf Bestellung 1676 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 8.36 EUR |
50+ | 6.62 EUR |
100+ | 5.67 EUR |
500+ | 5.04 EUR |
1000+ | 4.32 EUR |
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Technische Details FDP054N10 onsemi
Description: MOSFET N-CH 100V 120A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V, Power Dissipation (Max): 263W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13280 pF @ 25 V.
Weitere Produktangebote FDP054N10 nach Preis ab 4.35 EUR bis 8.45 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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FDP054N10 | Hersteller : onsemi / Fairchild | MOSFETs 100V N-Chan PowerTrench MOSFET |
auf Bestellung 1039 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP054N10 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 100V 144A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FDP054N10 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 100V 144A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FDP054N10 | Hersteller : ONSEMI |
Description: ONSEMI - FDP054N10 - Leistungs-MOSFET, n-Kanal, 100 V, 120 A, 0.0046 ohm, TO-220, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 100 Dauer-Drainstrom Id: 120 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 263 Bauform - Transistor: TO-220 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.0046 Betriebstemperatur, max.: 175 Schwellenspannung Vgs: 3.5 SVHC: No SVHC (15-Jan-2018) |
Produkt ist nicht verfügbar |