Technische Details FDP054N10 ON Semiconductor
Description: MOSFET N-CH 100V 120A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 13280 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 263W (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote FDP054N10 nach Preis ab 4.33 EUR bis 9.47 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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FDP054N10 | ON Semiconductor |
 Trans MOSFET N-CH 100V 144A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 222 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP054N10 | onsemi |
Description: MOSFET N-CH 100V 120A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 13280 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 263W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 640 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP054N10 | onsemi / Fairchild |
MOSFETs 100V N-Chan PowerTrench MOSFET |
auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDP054N10 | ONN |
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auf Bestellung 900 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDP054N10 |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 100V 144A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 100V 144A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 222 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 120+ | 5.55 EUR |
| FDP054N10 |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 120A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 13280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 100V 120A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 13280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 640 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.45 EUR |
| 50+ | 5.06 EUR |
| 100+ | 4.33 EUR |
| FDP054N10 |
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Hersteller: onsemi / Fairchild
MOSFETs 100V N-Chan PowerTrench MOSFET
MOSFETs 100V N-Chan PowerTrench MOSFET
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.47 EUR |
| 10+ | 5.01 EUR |
| FDP054N10 |
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Hersteller: ONN
auf Bestellung 900 Stücke:
Lieferzeit 21-28 Tag (e)