FDP2710-F085 ON Semiconductor / Fairchild
auf Bestellung 558 Stücke:
Lieferzeit 14-28 Tag (e)
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Technische Details FDP2710-F085 ON Semiconductor / Fairchild
Description: 4A, 250V, 0.047OHM, N-CHANNEL ,, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 47mOhm @ 50A, 10V, Power Dissipation (Max): 403W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5690 pF @ 25 V.
Weitere Produktangebote FDP2710-F085
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| FDP2710-F085 | Hersteller : ON Semiconductor |
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auf Bestellung 760 Stücke: Lieferzeit 21-28 Tag (e) |
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FDP2710-F085 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 250V 50A Automotive 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FDP2710-F085 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 250V 50A Automotive AEC-Q101 3-Pin(3+Tab) TO-220 Tube |
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FDP2710_F085 | Hersteller : Fairchild Semiconductor |
Description: 4A, 250V, 0.047OHM, N-CHANNEL , Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 47mOhm @ 50A, 10V Power Dissipation (Max): 403W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5690 pF @ 25 V |
Produkt ist nicht verfügbar |
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FDP2710-F085 | Hersteller : onsemi |
Description: MOSFET N-CH 250V 4A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 50A, 10V Power Dissipation (Max): 403W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5690 pF @ 25 V |
Produkt ist nicht verfügbar |