FDP7030BL ON Semiconductor
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 170+ | 0.92 EUR |
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Technische Details FDP7030BL ON Semiconductor
Description: MOSFET N-CH 30V 60A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -65°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 15 V.
Weitere Produktangebote FDP7030BL nach Preis ab 1.64 EUR bis 1.64 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FDP7030BL | Hersteller : Fairchild Semiconductor |
 Description: POWER FIELD-EFFECT TRANSISTOR, 6Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 15 V |
auf Bestellung 72127 Stücke: Lieferzeit 21-28 Tag (e) |
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FDP7030BL | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 60A 3-Pin(3+Tab) TO-220 Tube |
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FDP7030BL | Hersteller : ONSEMI |
Description: ONSEMI - FDP7030BL - Leistungs-MOSFET, n-Kanal, 30 V, 60 A, 0.009 ohm, TO-220, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 60 Qualifikation: - MSL: - Verlustleistung Pd: 65 Gate-Source-Schwellenspannung, max.: 1.9 Verlustleistung: 65 Bauform - Transistor: TO-220 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.009 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.009 SVHC: Lead (19-Jan-2021) |
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| FDP7030BL | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 60W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 60A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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FDP7030BL | Hersteller : onsemi |
Description: MOSFET N-CH 30V 60A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 15 V |
Produkt ist nicht verfügbar |
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FDP7030BL | Hersteller : onsemi / Fairchild |
MOSFET N-Ch PowerTrench Logic Level |
Produkt ist nicht verfügbar |
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| FDP7030BL | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 60W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 60A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |