FDPF10N50UT Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: MOSFET N-CH 500V 8A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 25 V
auf Bestellung 436 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 324+ | 2.21 EUR |
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Technische Details FDPF10N50UT Fairchild Semiconductor
Description: MOSFET N-CH 500V 8A TO220F, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 25 V.
Weitere Produktangebote FDPF10N50UT nach Preis ab 3.56 EUR bis 4.89 EUR
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FDPF10N50UT | Hersteller : onsemi / Fairchild |
MOSFET 500V 8A N-Chan UniFET |
auf Bestellung 953 Stücke: Lieferzeit 14-28 Tag (e) |
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FDPF10N50UT | Hersteller : ONSEMI |
Description: ONSEMI - FDPF10N50UT - Leistungs-MOSFET, n-Kanal, 500 V, 8 A, 0.85 ohm, TO-220F Drain-Source-Spannung Vds: 500 Dauer-Drainstrom Id: 8 Qualifikation: - Verlustleistung Pd: 42 Gate-Source-Schwellenspannung, max.: 5 Verlustleistung: 42 Bauform - Transistor: TO-220F Anzahl der Pins: 3 Produktpalette: UniFET Ultra FRFET Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.85 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.85 SVHC: Lead (17-Jan-2022) |
auf Bestellung 862 Stücke: Lieferzeit 14-21 Tag (e) |
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FDPF10N50UT | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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FDPF10N50UT | Hersteller : onsemi |
Description: MOSFET N-CH 500V 8A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 25 V |
Produkt ist nicht verfügbar |