FDS4897C onsemi
Hersteller: onsemi
Description: MOSFET N/P-CH 40V 6.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.2A, 4.4A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 20V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET N/P-CH 40V 6.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.2A, 4.4A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 20V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 12500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.86 EUR |
5000+ | 0.82 EUR |
12500+ | 0.78 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDS4897C onsemi
Description: ONSEMI - FDS4897C - Dual-MOSFET, Komplementärer n- und p-Kanal, 40 V, 40 V, 6.2 A, 6.2 A, 0.021 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 6.2A, hazardous: false, rohsPhthalatesCompliant: YES, Drain-Source-Spannung Vds, p-Kanal: 40V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 6.2A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.021ohm, Verlustleistung, p-Kanal: 2W, Drain-Source-Spannung Vds, n-Kanal: 40V, euEccn: NLR, Anzahl der Pins: 8Pins, Drain-Source-Durchgangswiderstand, n-Kanal: 0.021ohm, productTraceability: Yes-Date/Lot Code, Verlustleistung, n-Kanal: 2W, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote FDS4897C nach Preis ab 0.63 EUR bis 3.4 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
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FDS4897C | Hersteller : ON Semiconductor | Trans MOSFET N/P-CH 40V 6.2A/4.4A 8-Pin SOIC T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS4897C | Hersteller : onsemi |
Description: MOSFET N/P-CH 40V 6.2A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.2A, 4.4A Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 20V Rds On (Max) @ Id, Vgs: 29mOhm @ 6.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
auf Bestellung 13524 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4897C | Hersteller : onsemi / Fairchild | MOSFET 40V Dual N & P-Ch PowerTrench MOSFET |
auf Bestellung 59908 Stücke: Lieferzeit 14-28 Tag (e) |
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FDS4897C | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Type of transistor: N/P-MOSFET Technology: PowerTrench® Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 40/-40V Drain current: 6.2/-4.4A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 43/73mΩ Mounting: SMD Gate charge: 20/28nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 21 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS4897C | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Type of transistor: N/P-MOSFET Technology: PowerTrench® Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 40/-40V Drain current: 6.2/-4.4A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 43/73mΩ Mounting: SMD Gate charge: 20/28nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS4897C | Hersteller : ONSEMI |
Description: ONSEMI - FDS4897C - Dual-MOSFET, Komplementärer n- und p-Kanal, 40 V, 40 V, 6.2 A, 6.2 A, 0.021 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 6.2A hazardous: false rohsPhthalatesCompliant: YES Drain-Source-Spannung Vds, p-Kanal: 40V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 6.2A Drain-Source-Durchgangswiderstand, p-Kanal: 0.021ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Anzahl der Pins: 8Pins Drain-Source-Durchgangswiderstand, n-Kanal: 0.021ohm productTraceability: Yes-Date/Lot Code Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS4897C | Hersteller : ON Semiconductor | Trans MOSFET N/P-CH 40V 6.2A/4.4A 8-Pin SOIC T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS4897C | Hersteller : Fairchild |
Trans MOSFET N/P-CH 40V 6.2A/4.4A 8-Pin SOIC FDS4897C TFDS4897C Anzahl je Verpackung: 10 Stücke |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS4897C | Hersteller : ON Semiconductor | Trans MOSFET N/P-CH 40V 6.2A/4.4A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS4897C | Hersteller : ON Semiconductor | Trans MOSFET N/P-CH 40V 6.2A/4.4A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |