FDS6672A Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 30V 12.5A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 15 V
Description: MOSFET N-CH 30V 12.5A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 15 V
auf Bestellung 259608 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
182+ | 2.68 EUR |
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Technische Details FDS6672A Fairchild Semiconductor
Description: MOSFET N-CH 30V 12.5A 8SOIC, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 15 V.
Weitere Produktangebote FDS6672A
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
FDS6672A | Hersteller : ONSEMI |
Description: ONSEMI - FDS6672A - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 259608 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS6672A | Hersteller : FAIRCHILD |
auf Bestellung 674 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS6672A | Hersteller : FAIRCHILD | 09+ |
auf Bestellung 1318 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS6672A | Hersteller : FAIRCHILD | SO-8 |
auf Bestellung 41000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS6672A | Hersteller : FSC |
auf Bestellung 9400 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS6672A | Hersteller : FSC | 09+ SO-8 |
auf Bestellung 10400 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS6672A | Hersteller : onsemi |
Description: MOSFET N-CH 30V 12.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 15 V |
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