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FDS6692A

FDS6692A Fairchild Semiconductor

FAIRS29166-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 9
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 9A, 10V
Power Dissipation (Max): 1.47W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 15 V
auf Bestellung 1731 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
582+1.25 EUR
Mindestbestellmenge: 582
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Technische Details FDS6692A Fairchild Semiconductor

Description: MOSFET N-CH 30V 9A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 11.5mOhm @ 9A, 10V, Power Dissipation (Max): 1.47W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 15 V.

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FDS6692A FDS6692A Hersteller : ON Semiconductor / Fairchild FDS6692A-D-1808274.pdf MOSFET 30V 9A 11.5 OHM NCH POWER TR
auf Bestellung 1762 Stücke:
Lieferzeit 14-28 Tag (e)
FDS6692A Hersteller : FAIRCHIL FAIRS29166-1.pdf?t.download=true&u=5oefqw fds6692a-d.pdf 09+ SOP8
auf Bestellung 1002 Stücke:
Lieferzeit 21-28 Tag (e)
FDS6692A Hersteller : FAIRCHILD FAIRS29166-1.pdf?t.download=true&u=5oefqw fds6692a-d.pdf 07+ SO-8
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
FDS6692A Hersteller : FAIRCHILD FAIRS29166-1.pdf?t.download=true&u=5oefqw fds6692a-d.pdf SO-8
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
FDS6692A FDS6692A Hersteller : ON Semiconductor 3648326114077414fds6692a.pdf Trans MOSFET N-CH 30V 9A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
FDS6692A FDS6692A Hersteller : onsemi fds6692a-d.pdf Description: MOSFET N-CH 30V 9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 9A, 10V
Power Dissipation (Max): 1.47W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 15 V
Produkt ist nicht verfügbar
FDS6692A FDS6692A Hersteller : onsemi fds6692a-d.pdf Description: MOSFET N-CH 30V 9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 9A, 10V
Power Dissipation (Max): 1.47W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 15 V
Produkt ist nicht verfügbar