FDT86106LZ onsemi
Hersteller: onsemiDescription: MOSFET N-CH 100V 3.2A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 108mOhm @ 3.2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 50 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4000+ | 1.35 EUR |
| 8000+ | 1.29 EUR |
| 12000+ | 1.23 EUR |
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Technische Details FDT86106LZ onsemi
Description: MOSFET N-CH 100V 3.2A SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Rds On (Max) @ Id, Vgs: 108mOhm @ 3.2A, 10V, Power Dissipation (Max): 2.2W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: SOT-223-4, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 50 V.
Weitere Produktangebote FDT86106LZ nach Preis ab 1.18 EUR bis 3.28 EUR
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FDT86106LZ | Hersteller : onsemi |
Description: MOSFET N-CH 100V 3.2A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 108mOhm @ 3.2A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-223-4 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 50 V |
auf Bestellung 14121 Stücke: Lieferzeit 21-28 Tag (e) |
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FDT86106LZ | Hersteller : onsemi / Fairchild |
MOSFET 100V N-Channel PowerTrench MOSFET |
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| FDT86106LZ | Hersteller : Fairchild |
Trans MOSFET N-CH 100V 3.2A 4-Pin(3+Tab) SOT-223 FDT86106LZ TFDT86106lz Anzahl je Verpackung: 10 Stücke |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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FDT86106LZ Produktcode: 133317 |
Transistoren > MOSFET N-CH |
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FDT86106LZ | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 3.2A 4-Pin(3+Tab) SOT-223 T/R |
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FDT86106LZ | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 3.2A 4-Pin(3+Tab) SOT-223 T/R |
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FDT86106LZ | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 3.2A 4-Pin(3+Tab) SOT-223 T/R |
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FDT86106LZ | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; 2.2W; SOT223 Mounting: SMD Case: SOT223 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 2.2W On-state resistance: 189mΩ Polarisation: unipolar Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 3.2A Type of transistor: N-MOSFET Anzahl je Verpackung: 4000 Stücke |
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FDT86106LZ | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; 2.2W; SOT223 Mounting: SMD Case: SOT223 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 2.2W On-state resistance: 189mΩ Polarisation: unipolar Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 3.2A Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |