FDY1002PZ onsemi
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 830MA SOT563F
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 446mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 830mA
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563F
Part Status: Active
Description: MOSFET 2P-CH 20V 830MA SOT563F
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 446mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 830mA
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563F
Part Status: Active
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.44 EUR |
6000+ | 0.42 EUR |
9000+ | 0.39 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDY1002PZ onsemi
Description: ONSEMI - FDY1002PZ - Dual-MOSFET, p-Kanal, 20 V, 20 V, 830 mA, 830 mA, 0.28 ohm, tariffCode: 85412100, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 830mA, hazardous: false, rohsPhthalatesCompliant: YES, Drain-Source-Spannung Vds, p-Kanal: 20V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 830mA, Drain-Source-Durchgangswiderstand, p-Kanal: 0.28ohm, Verlustleistung, p-Kanal: 625mW, Drain-Source-Spannung Vds, n-Kanal: 20V, euEccn: NLR, Anzahl der Pins: 6Pin(s), Drain-Source-Durchgangswiderstand, n-Kanal: 0.28ohm, productTraceability: Yes-Date/Lot Code, Verlustleistung, n-Kanal: 625mW, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote FDY1002PZ nach Preis ab 0.39 EUR bis 1.31 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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FDY1002PZ | Hersteller : onsemi |
Description: MOSFET 2P-CH 20V 830MA SOT563F Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 446mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 830mA Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563F Part Status: Active |
auf Bestellung 24605 Stücke: Lieferzeit 21-28 Tag (e) |
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FDY1002PZ | Hersteller : onsemi / Fairchild | MOSFET -20V DUAL P-CHAN POWERTRENCH |
auf Bestellung 94079 Stücke: Lieferzeit 14-28 Tag (e) |
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FDY1002PZ | Hersteller : ONSEMI |
Description: ONSEMI - FDY1002PZ - Dual-MOSFET, p-Kanal, 20 V, 20 V, 830 mA, 830 mA, 0.28 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 830mA hazardous: false rohsPhthalatesCompliant: YES Drain-Source-Spannung Vds, p-Kanal: 20V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 830mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.28ohm Verlustleistung, p-Kanal: 625mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Anzahl der Pins: 6Pin(s) Drain-Source-Durchgangswiderstand, n-Kanal: 0.28ohm productTraceability: Yes-Date/Lot Code Verlustleistung, n-Kanal: 625mW Betriebstemperatur, max.: 150°C |
auf Bestellung 8740 Stücke: Lieferzeit 14-21 Tag (e) |
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FDY1002PZ | Hersteller : ONSEMI |
Description: ONSEMI - FDY1002PZ - Dual-MOSFET, p-Kanal, 20 V, 20 V, 830 mA, 830 mA, 0.28 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 830mA hazardous: false rohsPhthalatesCompliant: YES Drain-Source-Spannung Vds, p-Kanal: 20V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 830mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.28ohm Verlustleistung, p-Kanal: 625mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Anzahl der Pins: 6Pin(s) Drain-Source-Durchgangswiderstand, n-Kanal: 0.28ohm productTraceability: Yes-Date/Lot Code Verlustleistung, n-Kanal: 625mW Betriebstemperatur, max.: 150°C |
auf Bestellung 8740 Stücke: Lieferzeit 14-21 Tag (e) |
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FDY1002PZ | Hersteller : ON Semiconductor | Trans MOSFET P-CH 20V 0.83A 6-Pin SOT-563F T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDY1002PZ | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.83A; 0.625W; SOT563F Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.83A Power dissipation: 0.625W Case: SOT563F Gate-source voltage: ±8V On-state resistance: 0.85Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDY1002PZ | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.83A; 0.625W; SOT563F Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.83A Power dissipation: 0.625W Case: SOT563F Gate-source voltage: ±8V On-state resistance: 0.85Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |