FDY1002PZ onsemi
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 0.83A SOT563F
Part Status: Active
Supplier Device Package: SOT-563F
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 830mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 446mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
| Anzahl | Preis |
|---|---|
| 3000+ | 0.29 EUR |
| 6000+ | 0.28 EUR |
| 9000+ | 0.27 EUR |
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Technische Details FDY1002PZ onsemi
Description: MOSFET 2P-CH 20V 0.83A SOT563F, Part Status: Active, Supplier Device Package: SOT-563F, Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V, Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 830mA, Drain to Source Voltage (Vdss): 20V, Power - Max: 446mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR), Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate.
Weitere Produktangebote FDY1002PZ nach Preis ab 0.27 EUR bis 1.37 EUR
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FDY1002PZ | onsemi / Fairchild |
MOSFETs -20V DUAL P-CHAN POWERTRENCH |
auf Bestellung 49423 Stücke: Lieferzeit 10-14 Tag (e) |
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FDY1002PZ | onsemi |
Description: MOSFET 2P-CH 20V 0.83A SOT563FVgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V Current - Continuous Drain (Id) @ 25°C: 830mA Drain to Source Voltage (Vdss): 20V Power - Max: 446mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: SOT-563F |
auf Bestellung 17622 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDY1002PZ |
![]() |
Hersteller: onsemi / Fairchild
MOSFETs -20V DUAL P-CHAN POWERTRENCH
MOSFETs -20V DUAL P-CHAN POWERTRENCH
auf Bestellung 49423 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 1.05 EUR |
| 10+ | 0.73 EUR |
| 100+ | 0.52 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.33 EUR |
| 3000+ | 0.28 EUR |
| 6000+ | 0.27 EUR |
| FDY1002PZ |
![]() |
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 0.83A SOT563F
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 830mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 446mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-563F
Description: MOSFET 2P-CH 20V 0.83A SOT563F
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 830mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 446mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-563F
auf Bestellung 17622 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.37 EUR |
| 21+ | 0.86 EUR |
| 100+ | 0.55 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.38 EUR |

