FDZ206P Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: MOSFET P-CH 20V 13A 30BGA
Packaging: Bulk
Package / Case: 30-WFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 4.5V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 30-BGA (4x3.5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4280 pF @ 10 V
auf Bestellung 369292 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 589+ | 1.33 EUR |
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Technische Details FDZ206P Fairchild Semiconductor
Description: MOSFET P-CH 20V 13A 30BGA, Packaging: Tape & Reel (TR), Package / Case: 30-WFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 4.5V, Power Dissipation (Max): 2.2W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 30-BGA (4x3.5), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4280 pF @ 10 V.
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Description: MOSFET P-CH 20V 13A 30BGA Packaging: Tape & Reel (TR) Package / Case: 30-WFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 4.5V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 30-BGA (4x3.5) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4280 pF @ 10 V |
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